? semiconductor components industries, llc, 2014 july, 2014 ? rev. 0 1 publication order number: ngtb30n60sw/d NGTB30N60SWG igbt this insulated gate bipolar transistor (igbt) features a robust and cost effective field stop (fs) trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. the igbt is well suited for half bridge resonant applications. incorporated into the device is a soft and fast co?packaged free wheeling diode with a low forward voltage. features ? low saturation voltage using trench with fieldstop technology ? low switching loss reduces system power dissipation ? low gate charge ? soft, fast free wheeling diode ? these are pb?free devices typical applications ? inverter welding ? ups systems absolute maximum ratings rating symbol value unit collector?emitter voltage v ces 600 v collector current @ t c = 25 c @ t c = 100 c i c 60 30 a pulsed collector current, t pulse limited by t jmax i cm 120 a diode forward current @ t c = 25 c @ t c = 100 c i f 60 30 a diode pulsed current, t pulse limited by t jmax i fm 120 a gate?emitter voltage v ge 20 v power dissipation @ t c = 25 c @ t c = 100 c p d 189 76 w operating junction temperature range t j ?55 to +150 c storage temperature range t stg ?55 to +150 c lead temperature for soldering, 1/8 from case for 5 seconds t sld 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. to?247 case 340l style 4 c g 30 a, 600 v v cesat = 1.9 v e off = 0.54 mj e device package shipping ordering information NGTB30N60SWG t o?247 (pb?free) 30 units / ra il http://onsemi.com a = assembly location y = year ww = work week g = pb?free package marking diagram 30n60s aywwg g e c
NGTB30N60SWG http://onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction?to?case, for igbt r jc 0.66 c/w thermal resistance junction?to?case, for diode r jc 2.73 c/w thermal resistance junction?to?ambient r ja 40 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector?emitter breakdown voltage, gate?emitter short?circuited v ge = 0 v, i c = 500 a v (br)ces 600 ? ? v collector?emitter saturation voltage v ge = 15 v, i c = 30 a v ge = 15 v, i c = 30 a, t j = 150 c v cesat ? ? 1.9 2.6 2.2 ? v gate?emitter threshold voltage v ge = v ce , i c = 150 a v ge(th) 4.5 5.5 6.5 v collector?emitter cut?off current, gate? emitter short?circuited v ge = 0 v, v ce = 600 v v ge = 0 v, v ce = 600 v, t j = 150 c i ces ? ? ? ? 0.2 2 ma gate leakage current, collector?emitter short?circuited v ge = 20 v , v ce = 0 v i ges ? ? 100 na dynamic characteristic input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 2040 ? pf output capacitance c oes ? 70 ? reverse transfer capacitance c res ? 50 ? gate charge total v ce = 480 v, i c = 30 a, v ge = 15 v q g 90 nc gate to emitter charge q ge 19 gate to collector charge q gc 45 switching characteristic, inductive load turn?on delay time t j = 25 c v cc = 400 v, i c = 30 a r g = 10 v ge = 0 v/ 15 v t d(on) 57 ns rise time t r 32 turn?off delay time t d(off) 109 fall time t f 91 turn?on switching loss e on 0.75 mj turn?off switching loss e off 0.54 mj turn?on delay time t j = 150 c v cc = 400 v, i c = 30 a r g = 10 v ge = 0 v/ 15 v t d(on) 56 ns rise time t r 34 turn?off delay time t d(off) 113 fall time t f 172 turn?on switching loss e on 0.91 mj turn?off switching loss e off 0.87 mj diode characteristic forward voltage v ge = 0 v, i f = 30 a v ge = 0 v, i f = 30 a, t j = 150 c v f 2.3 2.5 2.5 v reverse recovery time t j = 25 c i f = 30 a, v r = 400 v di f /dt = 200 a/ s t rr 200 ns reverse recovery charge q rr 1000 nc reverse recovery current i rrm 9 a product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
NGTB30N60SWG http://onsemi.com 3 typical characteristics figure 1. output characteristics figure 2. output characteristics v ce , collector?emitter voltage (v) v ce , collector?emitter voltage (v) 8 6 5 4 3 2 1 0 figure 3. output characteristics figure 4. typical transfer characteristics v ce , collector?emitter voltage (v) v ge , gate?emitter voltage (v) 8 0 figure 5. v ce(sat) vs. t j t j , junction temperature ( c) 175 150 125 100 75 50 25 0 i c , collector current (a) i c , collector current (a) v ce , collector?emitter voltage (v) 7 v ge = 15 v to 20 v t j = 25 c 9 v 8 v 7 v 8 6 5 4 3 2 1 i c , collector current (a) 7 t j = 150 c 9 v 8 v 7 v 8 6 5 4 3 2 1 0 i c , collector current (a) 7 t j = ?55 c 9 v 8 v t j = 25 c t j = 150 c 200 v ge = 15 v to 20 v v ge = 15 v to 20 v 24 ?75 ?50 ?25 2.5 2.0 1.5 1.0 0.5 figure 6. typical capacitance v ce , collector?emitter voltage (v) 90 80 50 40 30 20 10 0 c, capacitance (pf) 100 c ies c oes c res 70 60 10 v 11 v 10 v 11 v 10 v 11 v t j = 25 c 60 20 0 10,000 1000 100 10 120 0 100 120 12 18 4.0 80 70 60 40 30 20 10 0 120 80 60 40 20 0 120 80 60 40 20 0 50 14 10 6 40 90 16 3.0 3.5 i c = 30 a i c = 15 a i c = 60 a 13 v 100 110 100 13 v 100 13 v 80 4.5 i c = 5 a
NGTB30N60SWG http://onsemi.com 4 typical characteristics figure 7. diode forward characteristics v f , forward voltage (v) 3.0 2.5 2.0 1.5 1.0 0.5 0 120 i f , forward current (a) t j = 25 c t j = 150 c 100 80 40 20 0 figure 8. typical gate charge q g , gate charge (nc) 50 10 0 0 2 4 6 8 12 14 20 v ge , gate?emitter voltage (v) 70 10 figure 9. switching loss vs. temperature t j , junction temperature ( c) 140 120 100 80 60 40 20 0 switching loss (mj) 160 v ce = 400 v v ge = 15 v i c = 30 a rg = 10 e off figure 10. switching time vs. temperature t j , junction temperature ( c) 140 120 100 80 60 40 20 0 1000 switching time (ns) 160 v ce = 400 v v ge = 15 v i c = 30 a rg = 10 figure 11. switching loss vs. i c i c , collector current (a) 20 10 0 3.0 switching loss (mj) v ce = 400 v v ge = 15 v t j = 150 c rg = 10 e off figure 12. switching time vs. i c i c , collector current (a) 1000 switching time (ns) v ce = 400 v v ge = 15 v t j = 150 c rg = 10 5.0 t f t d(off) 10 t f t d(off) 30 10 0203050 10 1.5 1.0 0.5 0 40 70 2.5 2.0 1.0 0.5 0 40 60 60 100 e on 100 t d(on) t r e on 50 100 t d(on) t r 3.5 4.0 4.5 v ce = 400 v v ge = 15 v i c = 30 a 20 30 40 60 80 90 16 18 60 1.5
NGTB30N60SWG http://onsemi.com 5 typical characteristics t d(off) figure 13. switching loss vs. rg rg, gate resistor ( ) 45 35 25 15 5 switching loss (mj) v ce = 400 v v ge = 15 v t j = 150 c i c = 30 a 55 65 75 figure 14. switching time vs. rg rg, gate resistor ( ) 45 35 25 15 5 switching time (ns) 1000 55 65 75 8 5 figure 15. switching loss vs. v ce v ce , collector?emitter voltage (v) 325 275 225 175 switching loss (mj) 575 375 v ge = 15 v t j = 150 c i c = 30 a rg = 10 figure 16. switching time vs. v ce v ce , collector?emitter voltage (v) switching time (ns) 1000 figure 17. safe operating area v ce , collector?emitter voltage (v) i c , collector current (a) 1000 100 10 1 0.1 1 10 100 1000 50 s 100 s 1 ms dc operation single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature figure 18. reverse bias safe operating area v ce , collector?emitter voltage (v) i c , collector current (a) 1 10 100 1000 v ge = 15 v, t c = 125 c 100 0 100 10 1 t f t d(off) v ce = 400 v v ge = 15 v t j = 150 c i c = 30 a 10 v ge = 15 v t j = 150 c i c = 30 a rg = 10 10 3.0 2.5 2.0 1.5 1.0 0.5 0 0.8 0.2 0 325 275 225 175 57 5 375 425 475 525 1.8 1.4 425 475 525 100 t d(on) t r t f t d(on) t r 100 e on e off e on e off 0.4 0.6 1.0 1.2 1.6
NGTB30N60SWG http://onsemi.com 6 typical characteristics figure 19. igbt die self?heating square?wave duty cycle transient thermal response on?pulse width (s) 1 0.1 0.01 0.0001 1 square?wave peak r(t) ( c/w) 0.00001 50% duty cycle 20% 10% 5% 2% single pulse r jc = 0.66 junction c 1 c 2 r 1 r 2 duty factor = t 1 /t 2 peak t j = p dm x z jc + t c case c n r n 0.1 0.01 0.001 0.0001 0.001 r i ( c/w) c i (j/ c) 0.045172 0.002214 0.000001 0.175067 0.060092 0.270047 0.108471 0.001806 0.016641 0.011710 0.092191 0.002714 11.650732 figure 20. diode die self?heating square?wave duty cycle transient thermal response on?pulse width (s) square?wave peak r(t) ( c/w) 50% duty cycle 20% 10% 5% 2% single pulse 10 r jc = 2.73 junction case c 1 c 2 r 1 r 2 r n duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n 1 0.1 0.01 0.0001 0.000001 0.00001 0.001 r i ( c/w) c i (j/ c) 0.000014 0.069970 0.1 0.01 0.092027 0.101062 0.230940 0.414345 0.937517 0.780222 0.000109 0.000313 0.000433 0.000763 0.001067 0.004053 1 0.098174 0.101860
NGTB30N60SWG http://onsemi.com 7 package dimensions to?247 case 340l?02 issue f n p a k w f d g u e 0.25 (0.010) m yq s j h c 4 123 ?t? ?b? ?y? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2 pl 3 pl 0.63 (0.025) m tb m ?q? l dim min max min max inches millimeters a 20.32 21.08 0.800 8.30 b 15.75 16.26 0.620 0.640 c 4.70 5.30 0.185 0.209 d 1.00 1.40 0.040 0.055 e 1.90 2.60 0.075 0.102 f 1.65 2.13 0.065 0.084 g 5.45 bsc 0.215 bsc h 1.50 2.49 0.059 0.098 j 0.40 0.80 0.016 0.031 k 19.81 20.83 0.780 0.820 l 5.40 6.20 0.212 0.244 n 4.32 5.49 0.170 0.216 p --- 4.50 --- 0.177 q 3.55 3.65 0.140 0.144 u 6.15 bsc 0.242 bsc w 2.87 3.12 0.113 0.123 style 4: pin 1. gate 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ngtb30n60sw/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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